鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200 MHz
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k鈩?/div>
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k鈩?/div>
3
2
1.1
+0.3
鈥?.1
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
1
Min
50
50
Typ
Max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
mA
錚?/div>
0.1
0.5
2.0
20
0.25
4.9
0.2
鈭?0%
0.8
4.7
1.0
150
+30%
1.2
k鈩?/div>
錚?/div>
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00059BED
0.4
鹵0.2
5藲
V
V
V
1
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